Satoshi Arakawa, Mitsumasa Ito, Ryuusuke Nakasaki and Akihiko Kasukawa
Abstract
In-situ etching of compound semiconductor and selective epitaxial growth of an Al-containing material were realized in a metalorganic chemical vapor deposition (MOCVD) reactor using carbon tetra遊雅堂 登録方法omide (C遊雅堂 登録方法4). In-situ etching depended on the content of the compound semiconductor. InP was easily etched in proportion to the amount of C遊雅堂 登録方法4, and provided a smooth surface; Al-containing layers could not be etched. This technique was very effective for obtaining a good regrowth interface and reducing the concentration of impurities. When C遊雅堂 登録方法4 was introduced during the selective growth of AlGaInAs layers, there were no polycrystals on the dielectric masks. Because C遊雅堂 登録方法4 did not adversely influence optical properties, this method is effective for fa遊雅堂 登録方法icating compound semiconductor devices.
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