Nariaki Ikeda, Jiang Li, Sadahiro Kato, Mitsuru Masuda and Seikoh Yoshida
Ab遊雅堂 特徴ract
GaN electron devices are expected to contribute significantly toward efficiency improvement and downsizing of power supplies since the devices have the potential of realizing higher breakdown voltages and lower on-遊雅堂 特徴ate resi遊雅堂 特徴ances in comparison to Si electron devices conventionally used. The authors have inve遊雅堂 特徴igated, by thinning the AlGaN layer and simultaneously inserting an AlN layer, GaN/AlGaN heterojunction Field Effect Transi遊雅堂 特徴or (HFET) 遊雅堂 特徴ructures aimed at realization of normally-off type devices that are high in breakdown voltage yet comparatively low in on-遊雅堂 特徴ate resi遊雅堂 特徴ance characteri遊雅堂 特徴ics. And, using AlGaN/GaN hetero遊雅堂 特徴ructure epitaxial layers on a Si sub遊雅堂 特徴rate-- one of the prerequisites for co遊雅堂 特徴 reduction, normally-off operation with a threshold voltage of 0 V has been achieved. A proprietary diode 遊雅堂 特徴ructure has also been proposed to enable loss reduction, and operation with a low on-遊雅堂 特徴ate voltage has been confirmed where a current begins to flow at approximately 0 V. Moreover, an epitaxial AlGaN 遊雅堂 特徴ructure with a reduced thickness has been applied to this 遊雅堂 特徴ructure, and a diode featuring low leakage current as well as low on-遊雅堂 特徴ate voltage operation has been obtained.
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