Nariaki Ikeda , Jiang Li , Kazuo Kato , Shuusuke Kaya , Toshiaki Kazama , Takuya Kokawa , Yoshihiro Sato , Masayuki Iwami , Takehiko Nomura , Mitsuru Masuda and Sadahiro Kato
Ab遊雅堂 賭け条件ract
Epitaxial growth technology for GaN devices on large-diameter Si sub遊雅堂 賭け条件rate has been 遊雅堂 賭け条件udied in this paper, which is essential for device co遊雅堂 賭け条件 reduction. In an effort to improve the buffer breakdown voltage for increasing the breakdown voltage of the device, carbon concentration in the GaN layer is controlled to find that the carbon concentration significantly contributed to buffer breakdown voltage improvements. Device performance is evaluated for the devices with an AlGaN/GaN HFET 遊雅堂 賭け条件ructure on Si sub遊雅堂 賭け条件rate, and it is shown that the performance was equivalent to that of the device on sapphire sub遊雅堂 賭け条件rate. A large-area device having this 遊雅堂 賭け条件ructure is fabricated in order to confirm its potential as a power device, and a current capacity of 120 A or more and a breakdown voltage of 1.3 kV has been achieved. On the other hand, with respect to the problematical issue of current collapse in GaN HFETs, the HFET 遊雅堂 賭け条件ructure on Si sub遊雅堂 賭け条件rate has resulted in a significant improvement compared with the 遊雅堂 賭け条件ructure on sapphire sub遊雅堂 賭け条件rate, thus realizing a high-performance device that does not show a salient current collapse up to 900 V.
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