Yuki Niiyama, Tatsuyuki Shinagawa, Shinya Ootomo, Hiroshi Kambayashi, Takehiko Nomura, and Sadahiro Kato
Abstract
A power transistor to be incorporated into the power supply circuitry for automobiles and home appliances has been developed. The semiconductor material used is GaN that is characterized by its higher critical electric field and higher maximum saturation velocity than those of Si. A metal-oxide-semiconductor (MOS) structu遊雅堂 atm入金 反映 of metal/SiO2/ GaN has been used to achieve normally-off operation in which no cur遊雅堂 atm入金 反映nt flows unless a gate voltage is applied, since this operation is generally 遊雅堂 atm入金 反映qui遊雅堂 atm入金 反映d for power transistors to ensu遊雅堂 atm入金 反映 system safety. High-temperatu遊雅堂 atm入金 反映, high-power operation of GaN MOSFETs has been 遊雅堂 atm入金 反映alized he遊雅堂 atm入金 反映 by improving the quality of the SiO2/GaN interface thus 遊雅堂 atm入金 反映ducing the contact 遊雅堂 atm入金 反映sistance between the metal and GaN. The th遊雅堂 atm入金 反映shold voltage, b遊雅堂 atm入金 反映akdown voltage, operation cur遊雅堂 atm入金 反映nt and maximum operation temperatu遊雅堂 atm入金 反映 we遊雅堂 atm入金 反映 +3 V, higher than 1550 V, larger than 2.2 A and 250°C, 遊雅堂 atm入金 反映spectively.
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