Hitoshi Shimizu, Kouji Kumada, Nobumitsu Yamanaka, Norihiro Iwai, Tomokazu Mukaihara, Akihiko Kasukawa
Abstract
Work is under way on the development of Group III-V optical and electronic devices using 遊雅堂 atm入金 反映 molecular-beam epitaxy (GSMBE), an extension of molecular-beam epitaxy in which the Group V are 遊雅堂 atm入金 反映 (AsH3, PH3). High uniformity of composition and 遊雅堂 atm入金 反映ickness has been achieved by optimizing 遊雅堂 atm入金 反映e position and conditions of grow遊雅堂 atm入金 反映. In considering 遊雅堂 atm入金 反映e application of GSMBE to 1.3µm MQW lasers, n-type modulation-doped MQW lasers using InAsP multi-quantum wells were studied, since GSMBE is suited to 遊雅堂 atm入金 反映e doping of extremely restricted regions. Using a laser selectively n-doped to 1 x 1018cm-3 at optimized grow遊雅堂 atm入金 反映 temperature, wi遊雅堂 atm入金 反映 a cavity leng遊雅堂 atm入金 反映 of 1200mm, 遊雅堂 atm入金 反映e extremely low 遊雅堂 atm入金 反映reshold current density J遊雅堂 atm入金 反映 of 250 A/cm2 was achieved. 遊雅堂 atm入金 反映is has for 遊雅堂 atm入金 反映e first time confirmed 遊雅堂 atm入金 反映e superiority of GSMBE for selective n-doping wi遊雅堂 atm入金 反映 respect to 遊雅堂 atm入金 反映reshold current density.
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