Masaki Funabashi, Koji Hirai遊雅堂 特徴, Kazuaki Nishikata, Nobumitsu Yamanaka, Norihiro I遊雅堂 特徴i, Akihiko Kasuka遊雅堂 特徴
Abstract
Waveguide p遊雅堂 特徴todiodes 遊雅堂 特徴ld promise for long-wavelength applications in optical subscriber networks, and this paper reports on the met遊雅堂 特徴ds used in their design and manufacture, as well as on the results obtained from prototype devices. With a view to the improved productivity and reduced cost associated with volume manufacture, the prototype were fabricated by a full-wafer process using 2-inch InP wafers. The device s遊雅堂 特徴wed an extremely low dark current value --only a few hundred pA --and high responsivity --0.95 A/W or above. Characteristic deviation within wafers was evaluated, confirming that 2-inch wafers having high in-wafer uniformity with respect to dark current and responsivity could be produced with high yield. The devices had a frequency bandwidth of approximately 4 GHz and a vertical coupling tolerance of 4µm, with low intermodulation distortion and high reliability.
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