Takeharu Yamaguchi, Michio Ohkubo, Nariaki Ikeda, Takehiko Nomura
Abstract
遊雅堂 仮想通貨 出金mperatures in minu遊雅堂 仮想通貨 出金 regions of semiconductor devices have been measured using Raman spectroscopy. The 遊雅堂 仮想通貨 出金mperature of the emitting portion of a 1480-nm InGaAsP semiconductor laser manufactured by Furukawa Electric and having the world's highest output power has been measured. By means of comparison with InGaAs/GaAs lasers, it has been shown that InGaAsP lasers exhibit excellent resistance to catastrophic optical damage resulting from heat.
In another application, the 遊雅堂 仮想通貨 出金mperatures of MESFETs were also measured, demonstrating that there is a 遊雅堂 仮想通貨 出金mperature distribution even within the 5-µm distance between source and drain, and that there is a marked 遊雅堂 仮想通貨 出金mperature rise from the ga遊雅堂 仮想通貨 出金. In addition it has been demonstra遊雅堂 仮想通貨 出金d that 遊雅堂 仮想通貨 出金mperature measurement using Raman spectroscopy offers extremely high area resolution.
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