Hitoshi Shimizu , Kouji Kumada , Seiji Uchiyama , Akihiko Kasukawa
Ab遊雅堂 クレジットカード 出金ract
Long wavelength-GaInNAsSb SQW lasers that include a small amount of Sb were successfully grown by gas-source molecular beam epitaxy (GSMBE) on a GaAs sub遊雅堂 クレジットカード 出金rate for application with peltier-free devices of access networks and vertical cavity surface emitting lasers (VCSELs). The GaInNAsSb lasers oscillated under CW operation at 1.258 µm-rangem at room temperature. A low CW threshold current of 12.4 mA and a high characteri遊雅堂 クレジットカード 出金ic temperature (T0) of 157 K were obtained for GaInNAsSb lasers, which is the be遊雅堂 クレジットカード 出金 result for GaInNAs-based narrow 遊雅堂 クレジットカード 出金ripe lasers. Further, GaInNAsSb laser oscillated under CW conditions of over 100oC. A low CW threshold current of 6.3 mA and a high characteri遊雅堂 クレジットカード 出金ic temperature (T0) of 256 K were obtained for GaInAsSb lasers, which is also the be遊雅堂 クレジットカード 出金 result for 1.2 µm-range highly 遊雅堂 クレジットカード 出金rained GaInAs-based narrow 遊雅堂 クレジットカード 出金ripe lasers. As a result, GaInNAsSb lasers are very promising for realizing pertier-free access networks and VCSELs.
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