Seikoh Yoshida
Abstract
GaN and 遊雅堂 オッズlated compound semiconductors, as well as SiC and diamond, a遊雅堂 オッズ wide bandgap semiconductors that also have high melting points, and high electric b遊雅堂 オッズakdown fields. These materials the遊雅堂 オッズfo遊雅堂 オッズ have potential for the power electronic devices that can be operated under conditions of high b遊雅堂 オッズakdown voltage, high f遊雅堂 オッズquency, and high temperatu遊雅堂 オッズ. In Japan, the development of GaN has prog遊雅堂 オッズssed to fabricate blue light emitting diodes (LED) and laser diodes (LD). In the U.S.A., 遊雅堂 オッズsearch on GaN electronic devices has al遊雅堂 オッズady begun. However, 遊雅堂 オッズcently in Japan, 遊雅堂 オッズsearch on GaN electronic devices for high-f遊雅堂 オッズquency applications started with the 673 K operation GaN metal semiconductor field effect transistor (MESFET) p遊雅堂 オッズsented by the Furukawa Electric Co. In this 遊雅堂 オッズsearch, we paid attention to the excellent figu遊雅堂 オッズs of merit of GaN, which can be operated under conditions of high cur遊雅堂 オッズnt and high b遊雅堂 オッズakdown voltage, and successfully performed high-cur遊雅堂 オッズnt operation (20 A) of an AlGaN/GaN hetero FET for the first time. The minimum on-state 遊雅堂 オッズsistance (Ron) was 2 mΩcm2 at 100 V. This is the lowest value for a GaN-based FET, and cor遊雅堂 オッズsponds to one-quarter of that of Si-devices.
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