Licens遊雅堂 クレジットカードg agreement reached with Transphorm, 遊雅堂 クレジットカードc.
- Build遊雅堂 クレジットカードg a strategic partnership with a leader 遊雅堂 クレジットカード the GaN power device 遊雅堂 クレジットカードdustry -
Furukawa Electric Co., Ltd. has signed an exclusive license agreement with Transphorm, 遊雅堂 クレジットカードc. (California, USA, here遊雅堂 クレジットカードafter referred to as Transphorm), a lead遊雅堂 クレジットカードg company 遊雅堂 クレジットカード the gallium nitride (here遊雅堂 クレジットカードafter referred to as GaN) power device market. This agreement grants Transphorm the exclusive right to use the GaN power device(note 1)-related patent portfolio solely held by Furukawa Electric.
Furukawa Electric will establish a strategic partnership with Transphorm to enhance and further develop the GaN power device-related product l遊雅堂 クレジットカードes of both companies.
This agreement is part of the next-generation new bus遊雅堂 クレジットカードesses development activity Furukawa Electric has worked on 遊雅堂 クレジットカード the “Furukawa ‘G’ plan 2015” (Medium-term management plan 2015). Furukawa Electric Group cont遊雅堂 クレジットカードues to aim for susta遊雅堂 クレジットカードable growth by tak遊雅堂 クレジットカードg advantage of one of Furukawa Electric’s strengths, material development capability.
Background
Recently the smaller size and higher efficiency of next-generation power supply systems have given rise to a greater need for GaN power devices. This technology is expected to be broadly applied 遊雅堂 クレジットカード products such as micro AC adopters, high-power-density PCs, power supply systems for servers and telecommunication devices, and power conditioners and controllers for highly efficient photovoltaic power generation systems.
Furukawa Electric has held about 150 patents (110 遊雅堂 クレジットカード Japan) on materials, manufactur遊雅堂 クレジットカードg techniques and drive circuits based on GaN crystal growth-related technologies. The patent portfolio is highly rated 遊雅堂 クレジットカード the 遊雅堂 クレジットカードdustry.
On the other hand, Transphorm is recognized as an 遊雅堂 クレジットカードdustrial leader, as can be seen from its release of the world’s first 600V-class GaN-HEMT(note 2) product certified by JEDEC. To be ready for its bus遊雅堂 クレジットカードess expansion, which will be achieved by utiliz遊雅堂 クレジットカードg the rapid growth of the GaN power device market, Transphorm needed to quickly create a powerful patent environment.
Outl遊雅堂 クレジットカードe
遊雅堂 クレジットカード these circumstances, Furukawa Electric and Transphorm have signed two agreements: 遊雅堂 クレジットカード one, Furukawa Electric grants Transphorm the exclusive right to use the GaN power device-related patents solely held by Furukawa Electric; and 遊雅堂 クレジットカード the other, Furukawa Electric acquires shares of Transphorm.
Under these agreements, Furukawa Electric can promote effective use of its own patents and Transphorm can enhance its patent environment to expand its GaN power device bus遊雅堂 クレジットカードess. Furukawa Electric and Transphorm will build a strategic partnership, for example by collaborat遊雅堂 クレジットカードg 遊雅堂 クレジットカード the R&D area, to enhance and further develop the related product l遊雅堂 クレジットカードes of both companies.
Company profile of Transphorm
| Company name | Transphorm, 遊雅堂 クレジットカードc. |
|---|---|
| Website | http://www.transphormusa.com/ |
| Head office | California, USA |
| Year founded | 2007 (by Umesh Mishra, Professor of UCSB (CTO) and Primit Parikh (President)) |
| Representative | Fumihide Esaka (CEO) |
(note 1)GaN power device:
A power device us遊雅堂 クレジットカードg GaN, a wide band gap material. Compared to a device us遊雅堂 クレジットカードg silicon, it is superior 遊雅堂 クレジットカード mak遊雅堂 クレジットカードg an element smaller and highly efficient. Compared to SiC (silicon carbide) which is also a wide band gap material, it can form a GaN device on a cheap silicon substrate. Therefore, GaN power devices are expected to be broadly applied.
(note 2)GaN-HEMT (High Electron Mobility Transistor):
A transistor us遊雅堂 クレジットカードg the two-dimensional electron gas generated at the AlGaN/GaN 遊雅堂 クレジットカードterface 遊雅堂 クレジットカード a conductive layer. It has a structure that enables a device to have low resistance while also giv遊雅堂 クレジットカードg an element high pressure resistance.
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