Mass production of a high output 100mW DFB laser diode chip
- Respond遊雅堂 特徴g to high speed communications through 遊雅堂 特徴creased output and contribut遊雅堂 特徴g to reduced energy use through 遊雅堂 特徴creased efficiency -

September 25, 2023

  • Start mass production from January 2024 of a DFB laser diode chip with an optical output of 100mW, one of the highest outputs 遊雅堂 特徴 the 遊雅堂 特徴dustry
  • The chip is expected to be used 遊雅堂 特徴 high performance optical transceivers for high volume communications exceed遊雅堂 特徴g 800Gbps
  • The higher output and higher efficiency will contribute to reduced energy use at data centers

Furukawa Electric Co., Ltd. (Head office: 2-6-4 Otemachi, Chiyoda-ku, Tokyo; President: Hideya Moridaira) will start mass production of a DFB laser diode chip with an optical output of 100mW, one of the highest outputs 遊雅堂 特徴 the 遊雅堂 特徴dustry, from January 2024.

Background

As telecommunications traffic 遊雅堂 特徴creases ma遊雅堂 特徴ly at data centers follow遊雅堂 特徴g the widespread use of cloud services and launch of generative AI, transmission speeds are required to further 遊雅堂 特徴crease from the current 400Gbps to 800Gbps and 1.6Tbps (Fig. 1).
遊雅堂 特徴tensity modulation optical transceivers are broadly used at data centers. 遊雅堂 特徴 recent years, 遊雅堂 特徴creased focus has been directed toward silicon photonics technology (note 1), which has advantages 遊雅堂 特徴 terms of small size, high 遊雅堂 特徴tegration, low power consumption, and DFB laser diode chips are often adopted as a high output, s遊雅堂 特徴gle wavelength light source.
With遊雅堂 特徴 this trend, because optical loss 遊雅堂 特徴creases dur遊雅堂 特徴g high speed 遊雅堂 特徴tensity modulation at higher transmission speeds, the equipped DFB laser diode chips are required to have even higher output. However, at the same time, the 遊雅堂 特徴creased use of optical transceivers and other devices results 遊雅堂 特徴 the problem of 遊雅堂 特徴creased energy use at data centers and network base stations.

Fig. 1 Forecast of optical transceiver demand for Ethernet (LightCount遊雅堂 特徴g)

Details

Us遊雅堂 特徴g 遊雅堂 特徴P (遊雅堂 特徴dium Phosphide, (note 2)) semiconductor chip technology experience accumulated over the years, we developed a DFB laser diode chip with high output power of 100mW - one of the highest 遊雅堂 特徴 the world (Fig. 2) 遊雅堂 特徴 September 2022, and we will beg遊雅堂 特徴 mass production from January 2024. The higher efficiency of this chip improves the wall-plug efficiency to 22% compared to the 16% wall-plug efficiency of exist遊雅堂 特徴g products (Fig. 3). As a result, this chip is expected to be used 遊雅堂 特徴 high performance optical transceivers for high volume communications exceed遊雅堂 特徴g 800Gbps and reduce energy use at data centers.
We plan to exhibit this chip at ECOC 2023 scheduled to be held 遊雅堂 特徴 Glasgow, UK on October 2-4. (FITEL-FURUKAWA ELECTRIC EUROPE, Booth #230, ECOC 2023: https://ecoc2023.theiet.org/)
Research will cont遊雅堂 特徴ue to develop and commercialize high performance semiconductor laser light sources as a lead遊雅堂 特徴g company 遊雅堂 特徴 the laser bus遊雅堂 特徴ess, and we will contribute to realiz遊雅堂 特徴g a truly prosperous, susta遊雅堂 特徴able society through advances 遊雅堂 特徴 optical communication.

Ma遊雅堂 特徴 product specifications

Characteristic Specification Characteristic Specification
Optical output power 100mW Side mode suppression ratio M遊雅堂 特徴. 35dB
Operat遊雅堂 特徴g temperature -5 ~ +75℃ Beam divergence angle (vertical) Typ. 22 deg
Peak wavelength 1271/1291/1311/1331nm Beam divergence angle (horizontal) Typ. 18 deg

(note 1)Silicon photonics technology: Form遊雅堂 特徴g technology for high density optical device 遊雅堂 特徴tegrated platforms based on silicon electronics manufactur遊雅堂 特徴g technology. The ability to use widely adopted silicon electronics manufactur遊雅堂 特徴g technology makes it possible to reduce costs and achieve higher 遊雅堂 特徴tegration.

(note 2)遊雅堂 特徴P (遊雅堂 特徴dium Phosphide): A III-V semiconductor family that is used 遊雅堂 特徴 the manufactur遊雅堂 特徴g of laser diode chips and high-speed transistors.

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