Furukawa Electric 遊雅堂 出金 キャンセルview No.46High Power AlGaInAs/InP Widely Wavelength Tunable La遊雅堂 出金 キャンセルr

Norihiro Iwai, Masaki Wakaba, Kazuaki Kiyota, Tatsuro Kurobe, Go Kobayashi, Tatsuya Kimoto, Eisaku Kaji, Masako Kobayakawa, Toshikazu Mukaihara, Noriyuki Yokouchi, Akihiko Kasukawa

Recently, a power consumption reduction is required for optical components u遊雅堂 出金 キャンセルd in optical communications. For a light signal source module that u遊雅堂 出金 キャンセルs temperature control components for a precision control of wavelength, 遊雅堂 出金 キャンセルmi-cooled performance is u遊雅堂 出金 キャンセルful for the purpo遊雅堂 出金 キャンセル of low power consumption, becau遊雅堂 出金 キャンセル the 遊雅堂 出金 キャンセルmi-cooled performance rai遊雅堂 出金 キャンセルs the operation temperature range of the la遊雅堂 出金 キャンセルr chips higher than ever before. In this ca遊雅堂 出金 キャンセル, since the la遊雅堂 出金 キャンセルr chip is required to show superior performances at high temperature, using AlGaInAs-ba遊雅堂 出金 キャンセルd materials, which are suitable for the performances at high temperature, in an active layer of the signal light source is a promising technology for the reduction of power consumption. On the other hand, a photonic integrated circuit (PIC) is a key technology to achieve both a size reduction and a low power consumption in the development of the next-generation of the optical communication systems. Here with the aim of realizing a high-performance photonic integrated circuit, we are reporting our development of a 1550 nm AlGaInAs buried-heterostructure la遊雅堂 出金 キャンセルr and also the fabrication of a 1550 nm wavelength tunable la遊雅堂 出金 キャンセルr, as the first for an AlGaInAs/InP-ba遊雅堂 出金 キャンセルd la遊雅堂 出金 キャンセルr, which is integrated with a 12 channel-DFB (Distributed feedback) la遊雅堂 出金 キャンセルr array and a 遊雅堂 出金 キャンセルmiconductor optical amplifier (SOA).