Hirokazu Sasaki, Sh遊雅堂 おすすめya Otomo, Ryuichiro M遊雅堂 おすすめato, Junji Yoshida
Abstract
The observation of the Gallium arsenide (GaAs) model specimen and the analysis of the semi遊雅堂 おすすめductor laser diode were carried out by using the electron holography, which is one of the methods of the transmission electron microscope, and Lorentz microscopy. In the observation using the electron holography, not only pn junction but also interfaces which are in different dopant 遊雅堂 おすすめcentration regions of the 1x1019 and 1x1018 cm-3 regions and the 1x1018 and 1x1017 cm-3 regions could be observed. Then, the analysis example for the semi遊雅堂 おすすめductor laser diode was introduced and described that these methods have been used practically.
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