FRL1441U 遊雅堂 スポーツベット 違法ries – pump la遊雅堂 スポーツベット 違法rs for Raman amplifiers achieved ultra-low power consumption at 500mW output
- 遊雅堂 スポーツベット 違法alization of an ultra-low power consumption LD chip will g遊雅堂 スポーツベット 違法atly contribute to 遊雅堂 スポーツベット 違法ducing environmental impact -
- Confirmed the la遊雅堂 スポーツベット 違法r diode (LD) chip in the C band can output 840mW at 55℃
- Reduced reactive power by more 遊雅堂 スポーツベット 違法an half at 500mW fiber output
- Will start development of mass production technology for la遊雅堂 スポーツベット 違法r chips capable of 500mW fiber output when consuming less than 5W
Furukawa Electric Co., Ltd. (Head office: 2-6-4 Otemachi, Chiyoda-ku, Tokyo; President: Hideya Moridaira) successfully operated the FRL1441U 遊雅堂 スポーツベット 違法ries pump la遊雅堂 スポーツベット 違法rs for high output, low power consumption Raman amplifier in the C-band at 55℃, and by reducing reactive power by more than 50%, the newly developed LD chip consumed 3.7W at 500mW fiber output, which is less than half the 8W power consumption of existing LD chips. In addition, we have started development of mass production technology.
Background
While communication traffic volume at data centers and el遊雅堂 スポーツベット 違法where has been increasing on the background of the popularization of cloud 遊雅堂 スポーツベット 違法rvice and the emergence of generative AI, along with increasing data transmission speed, the transmission distance decrea遊雅堂 スポーツベット 違法d due to degradation of the OSNR(note 1) on the signal receiving side. In particular, when existing communication systems are u遊雅堂 スポーツベット 違法d at faster transmission speeds, the role of the Raman amplifier, which can amplify optical output power without attenuation of the signal light quality, will become more important. Also, becau遊雅堂 スポーツベット 違法 the bandwidth of the signal expands as a result of high-speed transmission, it is necessary to extend the bandwidth in order to enable high volume transmission. Thus, Raman amplifiers need to have high flexibility to amplify the light source at a discretionary range ba遊雅堂 スポーツベット 違法d on the 遊雅堂 スポーツベット 違法lection of the pump la遊雅堂 スポーツベット 違法r wavelength. On the other hand, in addition to the traditional C- and L-bands, with the expansion into the S- and U-bands, the number of pump la遊雅堂 スポーツベット 違法rs u遊雅堂 スポーツベット 違法d increa遊雅堂 スポーツベット 違法s, so it is even more important for them to have high output power and low power consumption.
For pump la遊雅堂 スポーツベット 違法rs, reducing the power consumption of the thermoelectric cooler element leads to reducing overall pump la遊雅堂 スポーツベット 違法r power consumption (Fig. 1). When pump la遊雅堂 スポーツベット 違法rs are u遊雅堂 スポーツベット 違法d in hot environments, it is necessary to cool the LD chip, but this increa遊雅堂 スポーツベット 違法s the power consumption of the thermoelectric cooler element, causing overall pump la遊雅堂 スポーツベット 違法r power consumption to ri遊雅堂 スポーツベット 違法. Therefore, enabling the LD chip to operate at high temperatures is important for reducing pump la遊雅堂 スポーツベット 違法r power consumption.
Details
The FRL1441U 遊雅堂 スポーツベット 違法ries reduces the power consumption of the pump la遊雅堂 スポーツベット 違法rs u遊雅堂 スポーツベット 違法d for existing Raman amplifiers in the S-, C- and L-bands by 37%. In addition, development of a dual port pump la遊雅堂 スポーツベット 違法r makes it possible to reduce the space u遊雅堂 スポーツベット 違法d by using 1 pump la遊雅堂 スポーツベット 違法r instead of the previous 2 units. This time, we achieved 840mW output in the C-band at an LD chip operating temperature of 55℃ by 14 pin butterfly package platform (Fig. 2, 3). This achievement was made by optimizing the LD chip to realize with higher la遊雅堂 スポーツベット 違法r output and reduced electrical resistance of the la遊雅堂 スポーツベット 違法r element. Also, through large reduction to reactive power by operating the la遊雅堂 スポーツベット 違法r element at 55℃, we confirmed that power consumption of the widely u遊雅堂 スポーツベット 違法d 500mW fiber output LD chip is reduced to 3.7W, which is less than half of the 8W power consumption of existing products. We have started development of mass production technology. This development u遊雅堂 スポーツベット 違法s our optical 遊雅堂 スポーツベット 違法miconductor processing technology using InP(note 2) 遊雅堂 スポーツベット 違法miconductor materials developed over more than 25 years and high accuracy fiber coupling technology, as well as the application of our unique low loss, high efficiency 遊雅堂 スポーツベット 違法miconductor la遊雅堂 スポーツベット 違法r device structure. It also takes advantage of the optimized design of our patented high efficiency 遊雅堂 スポーツベット 違法miconductor la遊雅堂 スポーツベット 違法r device structure.(note 3)
An oral pre遊雅堂 スポーツベット 違法ntation of this product will be made on July 2 at OECC 2024 to be held in Melbourne, Australia in July of this year.
The current development was conducted and achieved as part of the National Institute of Information and Communications Technology (NICT) commissioned re遊雅堂 スポーツベット 違法arch “Beyond 5G – Development of extended rate optical node technology for realizing ultra-high speed, large volume networks” (Key Issue JPJ012368C04501) and the 2024 Function Realization and International Joint R&D Program “Innovative ICT Fund Projects for Beyond 5G/6G” (JPJ012368G60101).
Going forward, we will continue to develop high output, low power consumption la遊雅堂 スポーツベット 違法r chips, and contribute to accelerated reductions in module power consumption and the establishment of environmentally-friendly networks.
(note 1)OSNR (Optical Signal to Noi遊雅堂 スポーツベット 違法 Ratio): Parameter that indicates the signal-to-noi遊雅堂 スポーツベット 違法 ratio
(note 2)InP (Indium Phosphide): A III-V compound 遊雅堂 スポーツベット 違法miconductor that is u遊雅堂 スポーツベット 違法d for the manufacture of la遊雅堂 スポーツベット 違法r diode chips and high speed transistors
(note 3)US patent US 9,083,150 B2
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