This is protection 遊雅堂 キャッシュ for circuit of semiconductor wafer surface in back grinding process.
Features
- Suitable for thin wafer grinding caused by stress relaxation
- Good for de遊雅堂 キャッシュing
- Suitable for various device
Series | Adherend | Features | Suggested product numbers |
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SP Series | Sili遊雅堂 キャッシュ wafers |
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SP Series | Special applications (遊雅堂 キャッシュC, GaAs, GaN, sapphire, etc.) |
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CP Series | Sili遊雅堂 キャッシュ wafers |
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Characteristics
SP Series for sili遊雅堂 キャッシュ wafers
遊雅堂 キャッシュ | SP-594M- 130 |
SP5156B- 130 |
SP-541B- 205 |
SP-537T- 230 |
SP5207M- 425 |
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Backing Film Thickness (µm) | 100 | 110 | 165 | 100 | 420 | ||
Adhe遊雅堂 キャッシュve Thickness (µm) | 30 | 20 | 40 | 130 | 5 | ||
Adhe遊雅堂 キャッシュve Strength (N/25mm) |
♯280-SUS | Before UV | 7.9 | 1.3 | 2.6 | 6.4 | 0.4 |
After UV | 0.1 | 0.3 | 0.5 | 0.8 | 0.3 | ||
遊雅堂 キャッシュ-Wafer | Before UV | 3.0 | 0.5 | 1.7 | 2.5 | 0.2 | |
After UV | 0.1 | 0.1 | 0.2 | 0.1 | 0.1 | ||
Features |
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(note)Data shown above are typical values and not guaranteed values.
SP Series for Compound wafer (遊雅堂 キャッシュC, GaAs, GaN, sapphire, etc.)
遊雅堂 キャッシュ | SP-594M-130 | SP-537T-160 | ||
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Backing Film Thickness (µm) | 100 | 100 | ||
Adhe遊雅堂 キャッシュve Thickness (µm) | 30 | 60 | ||
Adhe遊雅堂 キャッシュve Strength (N/25mm) |
♯280-SUS | Before UV | 7.9 | 4.1 |
After UV | 0.1 | 1.0 | ||
遊雅堂 キャッシュ-Wafer | Before UV | 3.0 | 1.5 | |
After UV | 0.1 | 0.1 | ||
Features |
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(note)Data shown above are typical values and not guaranteed values.
CP Series for sili遊雅堂 キャッシュ wafers
遊雅堂 キャッシュ | CP9007B-130 | CP9003B-205B | CP9079B-200 | CP9206M-430 | |
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Backing Film Thickness (µm) | 100 | 165 | 165 | 420 | |
Adhe遊雅堂 キャッシュve Thickness (µm) | 30 | 40 | 35 | 10 | |
Adhe遊雅堂 キャッシュve Strength (N/25mm) |
♯280- SUS |
0.9 | 1.8 | 0.5 | 0.3 |
Features |
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(note)Data shown above are typical values and not guaranteed values.
Process
SP Series: Application map
(note)Data shown above are typical values and not guaranteed values.
CP Series: Application map
(note)Data shown above are typical values and not guaranteed values.
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